Silicon Trench Etching by Electron Cyclotron Resonance Plasma

Hitachi High-Technologies released a new dry plasma etcher designated as the Hitachi M-6180 and targeted for deep silicon trench etch. The new Hitachi M-6180 deep trench etcher provides for excellent uniformity, superior trench profiles, and high selectivity. The Hitachi M-6180 is based on an ECR (Electron Cyclotron Resonance) plasma source able to generate a high density (1×1011 cm-3) plasma at 0.01 Pa. The low temperature and low pressure reactions of the Hitachi M-6180 achieve superior trench profiles with no sidewall residue. The clean nature of the Hitachi M-6180 ECR etch chamber allows for Mean Time Between Wet Cleaning (MTBW) that is extremely long and particle levels that are very low.