Effect of Rare Earth Coatings on Photoelectric Characteristics of Porous Silicon Structures

The effect of coatings containing dysprosium or erbium ions on the properties of photosensitive structures based on porous silicon is studied. Current–voltage characteristics, capacitance–voltage characteristics, and spectral characteristics of structures with a junction and erbium fluoride or dysprosium fluoride films as well as structures with an oxide layer of a complex composition containing erbium ions are measured. The effect of X-ray radiation with a quantum energy of 6.9 keV on the photoelectric properties of structures with a porous layer and an erbium fluoride coating is studied. It is shown that the coating significantly affects the characteristics of the structures.