Determining the parameters of silicon ions implanted into dielectric layers by spectroscopic ellipsometry
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| Veröffentlicht in: | Optoelectronics, instrumentation, and data processing instrumentation, and data processing, 2007-10, Vol.43 (5), p.445-452 |
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| container_end_page | 452 |
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| container_issue | 5 |
| container_start_page | 445 |
| container_title | Optoelectronics, instrumentation, and data processing |
| container_volume | 43 |
| creator | Shvets, V. A. Prokopyev, V. Yu Chikichev, S. I. Aulchenko, N. A. |
| description | |
| doi_str_mv | 10.3103/S8756699007050081 |
| format | Article |
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| identifier | ISSN: 8756-6990 |
| ispartof | Optoelectronics, instrumentation, and data processing, 2007-10, Vol.43 (5), p.445-452 |
| issn | 8756-6990 1934-7944 |
| language | eng |
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| source | SpringerLink Journals |
| title | Determining the parameters of silicon ions implanted into dielectric layers by spectroscopic ellipsometry |
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