Photovoltaic structures ITO/SiOх/n-Si of increased efficiency

Photovoltaic structures ITO/SiOх/n-Si of increased efficiency

Structures ITO/SiO х / n -Si are fabricated by pulverization of solutions of indium and tin chlorides on the (100) surface of silicon wafers with resistivity 4.5 Ω cm. The influence of the state of the Si surface on the efficiency of structures as photoelectric converters is investigated. It is show...

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Veröffentlicht in:Surface engineering and applied electrochemistry 2016-05, Vol.52 (3), p.284-288
Hauptverfasser: Simashkevich, A., Sherban, D., Caraman, M., Rusu, M., Bruc, L., Curmei, N.
Format: Artikel
Sprache:eng
Schlagworte:
Engineering
Machines
Manufacturing
Processes
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Zusammenfassung:Structures ITO/SiO х / n -Si are fabricated by pulverization of solutions of indium and tin chlorides on the (100) surface of silicon wafers with resistivity 4.5 Ω cm. The influence of the state of the Si surface on the efficiency of structures as photoelectric converters is investigated. It is shown that structures with an unetched surface of silicon wafers are the most efficient. Solar cells based on studied ITO/SiO х / n -Si structures with an inverse layer demonstrate an efficiency close to 16% in AM 1.5 conditions.
ISSN:1068-3755
1934-8002
DOI:10.3103/S1068375516030108