Memristors based on lithium doped ZnO films

Memristors based on lithium doped ZnO films

The memristor memory cell ReRAM was developed and investigated. The developed structure consists of a Schottky diode (1D) based on the ZnO:Ga/ZnO:Li/ZnO heterostructure and the memristor (1R) based on the Pt/ZnO/ZnO:Li/Al heterostructure. Thus, the unipolar memristor memory cell of 1D1R type was obt...

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Veröffentlicht in:Journal of contemporary physics 2015-07, Vol.50 (3), p.277-281
Hauptverfasser: Elbakyan, E. Y., Hovsepyan, R. K., Poghosyan, A. R.
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container_title Journal of contemporary physics
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creator Elbakyan, E. Y.
Hovsepyan, R. K.
Poghosyan, A. R.
description The memristor memory cell ReRAM was developed and investigated. The developed structure consists of a Schottky diode (1D) based on the ZnO:Ga/ZnO:Li/ZnO heterostructure and the memristor (1R) based on the Pt/ZnO/ZnO:Li/Al heterostructure. Thus, the unipolar memristor memory cell of 1D1R type was obtained. The heterostructures were created by the vacuum electron-beam evaporation method. The laboratory samples of the memory cells were prepared and their characteristics were studied.
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Physics
Physics and Astronomy
title Memristors based on lithium doped ZnO films
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