Memristors based on lithium doped ZnO films

The memristor memory cell ReRAM was developed and investigated. The developed structure consists of a Schottky diode (1D) based on the ZnO:Ga/ZnO:Li/ZnO heterostructure and the memristor (1R) based on the Pt/ZnO/ZnO:Li/Al heterostructure. Thus, the unipolar memristor memory cell of 1D1R type was obt...

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Veröffentlicht in:	Journal of contemporary physics 2015-07, Vol.50 (3), p.277-281
Hauptverfasser:	Elbakyan, E. Y., Hovsepyan, R. K., Poghosyan, A. R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Particle and Nuclear Physics Physics Physics and Astronomy
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The memristor memory cell ReRAM was developed and investigated. The developed structure consists of a Schottky diode (1D) based on the ZnO:Ga/ZnO:Li/ZnO heterostructure and the memristor (1R) based on the Pt/ZnO/ZnO:Li/Al heterostructure. Thus, the unipolar memristor memory cell of 1D1R type was obtained. The heterostructures were created by the vacuum electron-beam evaporation method. The laboratory samples of the memory cells were prepared and their characteristics were studied.
ISSN:	1068-3372 1934-9378
DOI:	10.3103/S1068337215030093