Temperature dependence of dark current-voltage characteristics of nInSb-nPbTe-nCdTe isotype structure

The temperature dependence of dark current-voltage characteristics of an n InSb- n PbTe- n CdTe structure is investigated. It is shown that in the temperature range from 115 K to 125 K an energy barrier exists for charge carriers through the InSb layer, which is strictly connected with different tem...

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Veröffentlicht in:	Journal of contemporary physics 2008-06, Vol.43 (3), p.142-143
Hauptverfasser:	Avjyan, K. E., Vardanyan, G. H., Khachatryan, A. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Particle and Nuclear Physics Physics Physics and Astronomy
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The temperature dependence of dark current-voltage characteristics of an n InSb- n PbTe- n CdTe structure is investigated. It is shown that in the temperature range from 115 K to 125 K an energy barrier exists for charge carriers through the InSb layer, which is strictly connected with different temperature dependences of electron concentrations in n InSb and n PbTe.
ISSN:	1068-3372 1934-9378
DOI:	10.3103/S1068337208030109