Synthesis of carbon films by magnetron sputtering of a graphite target using hydrogen as plasma-forming gas
During magnetron sputtering of graphite using hydrogen as plasma-forming gas, a material sputtered from the target deposited only on heated substrates. When using currentheated Ni-Fe foils as substrates, carbon deposits of different crystal structures were obtained. The conditions for growing single...
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Veröffentlicht in: | Bulletin of the Lebedev Physics Institute 2011-09, Vol.38 (9), p.263-266 |
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container_title | Bulletin of the Lebedev Physics Institute |
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creator | Yurkov, A. N. Melnik, N. N. Sychev, V. V. Savranskii, V. V. Vlasov, D. V. Konov, V. I. |
description | During magnetron sputtering of graphite using hydrogen as plasma-forming gas, a material sputtered from the target deposited only on heated substrates. When using currentheated Ni-Fe foils as substrates, carbon deposits of different crystal structures were obtained. The conditions for growing single-crystal graphite layers and single- and multilayer graphenes are found by analyzing deposits by Raman scattering. |
doi_str_mv | 10.3103/S106833561109003X |
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title | Synthesis of carbon films by magnetron sputtering of a graphite target using hydrogen as plasma-forming gas |
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