High-power laser diodes of the spectral region of 808 nm and 980 nm
A technique for assembling high-power laser diodes emitting at 808 and 980 nm was developed, which stably provides high radiation parameters when using one of the standard types of heat sinks for assembling high-power laser diodes, i.e., the C -mount. The maximum achievable power of laser diodes wit...
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Veröffentlicht in: | Bulletin of the Lebedev Physics Institute 2010-05, Vol.37 (5), p.143-144 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A technique for assembling high-power laser diodes emitting at 808 and 980 nm was developed, which stably provides high radiation parameters when using one of the standard types of heat sinks for assembling high-power laser diodes, i.e., the
C
-mount. The maximum achievable power of laser diodes with a stripe contact width of 150 µm in the cw lasing mode was 25 W at a temperature of 20 °C. |
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ISSN: | 1068-3356 1934-838X |
DOI: | 10.3103/S1068335610050052 |