Effect of the form and localization of doping density perturbations on the current characteristics in a semiconductor superlattice

Effect of the form and localization of doping density perturbations on the current characteristics in a semiconductor superlattice

The effect doping density perturbations have on the current characteristics in a semiconductor superlattice is studied. The current characteristics are shown to depend on the localization and form of the perturbation. The effect of perturbations is strongest near the superlattice emitter. The effect...

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Veröffentlicht in:Bulletin of the Russian Academy of Sciences. Physics 2017, Vol.81 (1), p.43-46
Hauptverfasser: Balanov, A. G., Koronovskii, A. A., Moskalenko, O. I., Selskii, A. O., Hramov, A. E.
Format: Artikel
Sprache:eng
Schlagworte:
Hadrons
Heavy Ions
Nuclear Physics
Physics
Physics and Astronomy
Proceedings of the XV National Sukhorukov Seminar “Wave Phenomena in Inhomogeneous Media” (Waves 2016)
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Zusammenfassung:The effect doping density perturbations have on the current characteristics in a semiconductor superlattice is studied. The current characteristics are shown to depend on the localization and form of the perturbation. The effect of perturbations is strongest near the superlattice emitter. The effect grows along with the density profile integral and depends weakly on the form of the profile.
ISSN:1062-8738
1934-9432
DOI:10.3103/S1062873817010063