Properties of MnSb/GaAs heterostructures

Properties of MnSb/GaAs heterostructures

MnSb layers are deposited on GaAs(100) via the laser ablation of Mn and Sb targets. The magnetic field dependences of the transverse Kerr effect display magnetic anisotropy and magnetization jumps. Measurements of the Hall effect reveal a hysteresis loop at temperatures of up to 300 K.

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Veröffentlicht in:Bulletin of the Russian Academy of Sciences. Physics 2013, Vol.77 (1), p.69-71
Hauptverfasser: Vikhrova, O. V., Danilov, Yu. A., Dorokhin, M. V., Drozdov, Yu. N., Zvonkov, B. N., Zdoroveishev, A. V., Kudrin, A. V., Kalentyeva, I. L.
Format: Artikel
Sprache:eng
Schlagworte:
Hadrons
Heavy Ions
Nuclear Physics
Physics
Physics and Astronomy
Proceedings of the International Symposium “Nanophysics and Nanoelectronics”
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Zusammenfassung:MnSb layers are deposited on GaAs(100) via the laser ablation of Mn and Sb targets. The magnetic field dependences of the transverse Kerr effect display magnetic anisotropy and magnetization jumps. Measurements of the Hall effect reveal a hysteresis loop at temperatures of up to 300 K.
ISSN:1062-8738
1934-9432
DOI:10.3103/S1062873813010206