Photoelectric properties of bimodal arrays of InAs/GaAs quantum dots grown by means of gas phase epitaxy

Photoelectric properties of bimodal arrays of InAs/GaAs quantum dots grown by means of gas phase epitaxy

Study of the shape of the photoelectric spectrum from InAs/GaAs quantum dots and its temperature dependence is shown to be capable of revealing bimodal arrays of quantum dots.

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Veröffentlicht in:Bulletin of the Russian Academy of Sciences. Physics 2013, Vol.77 (1), p.53-55
Hauptverfasser: Gorshkov, A. P., Volkova, N. S., Karpovich, I. A., Zdoroveishev, A. V., Polova, I. A.
Format: Artikel
Sprache:eng
Schlagworte:
Hadrons
Heavy Ions
Nuclear Physics
Physics
Physics and Astronomy
Proceedings of the International Symposium “Nanophysics and Nanoelectronics”
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Zusammenfassung:Study of the shape of the photoelectric spectrum from InAs/GaAs quantum dots and its temperature dependence is shown to be capable of revealing bimodal arrays of quantum dots.
ISSN:1062-8738
1934-9432
DOI:10.3103/S1062873813010115