Influence of temperature on the characteristics of heterojunction bipolar transistor
Using the noise low-signal model with the help of Volterra’s series apparatus the influence of temperature on non-linear, amplification and noise characteristics of a low-noise microwave amplifier on heterojunction bipolar transistor in various operation modes is analyzed. On the basis of the obtain...
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| Veröffentlicht in: | Radioelectronics and communications systems 2008, Vol.51 (12), p.647-652 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
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| Online-Zugang: | Volltext |
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| Zusammenfassung: | Using the noise low-signal model with the help of Volterra’s series apparatus the influence of temperature on non-linear, amplification and noise characteristics of a low-noise microwave amplifier on heterojunction bipolar transistor in various operation modes is analyzed. On the basis of the obtained data practical recommendations on choosing the transistor’s power source under various temperatures to optimize its work are given. |
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| ISSN: | 0735-2727 1934-8061 |
| DOI: | 10.3103/S0735272708120030 |