Photothermovoltaic effect in a pSi-n(Si2)1 − x − y(ZnSe)x(GaP)y (0 ≤ x ≤ 0.88, 0 ≤ y ≤ 0.09) structure

The results of creating a variband epitaxial (Si 2 ) 1 − x − y (ZnSe) x (GaP) y layer and observing the photothermovoltaic effect in a p Si- n (Si 2 ) 1 − x − y (ZnSe) x (GaP) y (0 ≤ x ≤ 0.88, 0 ≤ y ≤ 0.09) heterostructure heated by concentrated solar radiation are detailed. It is shown that the photothermal and thermal voltages in the heterostructure equal 5.8 and 1.2 mV at a temperature of 80°C. The observed relatively high photothermal voltage value is attributed to the possible extrinsic thermophotoelectric effect in the layer of diluted solid solution adjacent to the p - n junction.