Spectral Photosensitivity ofpSi—n(ZnSe)1−x−y(Si2)x(GaP)y Structures

Epitaxial layers of substitutional solid solution (ZnSe) 1−x−y (Si 2 ) x (GaP) y (0.1 ≤ x ≤ 1, 0≤ y ≤0.9) on p Si substrates were developed from a limited volume of tin solution-melt using the method of a liquid phase epitaxy. The spectral dependency of photosensitivity of the p Si— n (ZnSe) 1 − x − y (Si 2 ) x (Ga.P) y structures was studied and the peaks of photoresponses at energies of photons of 1.6, 1.66, and 1.92 eV at room temperature were discovered. It was shown that the forward-bi as regions of the volt—ampere characteristics of structures under study can be described by the power dependence of − I = I 0 + B · V m with various values of a power index at various values of the voltage applied.