Influence of EB irradiation on water wettability of wafer

Influence of EB irradiation on water wettability of wafer

An influence of electron beam (EB) irradiation on the wettability is investigated of the (100) plane of the Si wafer. The wettability is estimated from the contact angle of water. The EB irradiation increases the wettability.

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Veröffentlicht in:Journal of Advanced Science 1996/07/15, Vol.8(1-2), pp.101-102
Hauptverfasser: HIRAIWA, Youji, MORI, Kiyotaka, NISHI, Yoshitake, TONEGAWA, Akira, IWASE, Mitsuo
Format: Artikel
Sprache:eng
Schlagworte:
electron beam irradiation
Si wafer
wettability
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Beschreibung
Zusammenfassung:An influence of electron beam (EB) irradiation on the wettability is investigated of the (100) plane of the Si wafer. The wettability is estimated from the contact angle of water. The EB irradiation increases the wettability.
ISSN:0915-5651
1881-3917
DOI:10.2978/jsas.8.101