Influence of He ion etching on superconducting transition temperature and critical current density of Bi1.6Pb0.4Sr2Ca2Cu3OX

Influence of He ion etching on superconducting transition temperature and critical current density of Bi1.6Pb0.4Sr2Ca2Cu3OX

It is a serious problem that excess helium-ion etching greatly deceases superconducting transition temperature (Tc) and critical current density (Jc) of Bi1.6Pb0.4Sr2Ca2Cu3Ox. Thus, the influence of the etching on Tc and Jc has been investigated for the Bi oxide. A critical DOSE (Dc) to maintain hig...

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Veröffentlicht in:Journal of Advanced Science 1994/03/15, Vol.6(1), pp.11-13
Hauptverfasser: Sakamoto, Kageyoshi, Ishii, Hirokazu, Tanihira, Tetsuji, Inoue, Noriyuki, Shima, Toshio, Nishi, Yoshitake
Format: Artikel
Sprache:eng
Schlagworte:
Bi oxide
critical DOSE (Dc)
helium-ion etching
High-Tc superconductor
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Zusammenfassung:It is a serious problem that excess helium-ion etching greatly deceases superconducting transition temperature (Tc) and critical current density (Jc) of Bi1.6Pb0.4Sr2Ca2Cu3Ox. Thus, the influence of the etching on Tc and Jc has been investigated for the Bi oxide. A critical DOSE (Dc) to maintain high Tc above 100K is defined and evaluated. The Dc value is about 3.2×1017(ions/mm2) for the helium-ion etching.
ISSN:0915-5651
1881-3917
DOI:10.2978/jsas.6.11