Preparation of GaN by alkoxide process using Ga (i-OC3H7)3 as raw material

Preparation of GaN by alkoxide process using Ga (i-OC3H7)3 as raw material

The Group-III nitrides have attracted much attention for applications of blue light emitters and high temperature electronic devices. The synthesis of single-phase gallium nitride (GaN) powder has been achieved by reacting gallium oxide or gallium triisopropoxide with ammonia (NH3) flowing in a hot...

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Veröffentlicht in:Journal of Advanced Science 2000/08/31, Vol.12(1-2), pp.103-104
Hauptverfasser: NAGAO, Tomomi, ISHIMOTO, Yoichi, MATSUSHITA, Jun-ichi
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Alkoxide
Gallium nitride
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container_title Journal of Advanced Science
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creator NAGAO, Tomomi
ISHIMOTO, Yoichi
MATSUSHITA, Jun-ichi
description The Group-III nitrides have attracted much attention for applications of blue light emitters and high temperature electronic devices. The synthesis of single-phase gallium nitride (GaN) powder has been achieved by reacting gallium oxide or gallium triisopropoxide with ammonia (NH3) flowing in a hot wall tube furnace.
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source J-STAGE Free; EZB-FREE-00999 freely available EZB journals; Free Full-Text Journals in Chemistry
subjects Alkoxide
Gallium nitride
title Preparation of GaN by alkoxide process using Ga (i-OC3H7)3 as raw material
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