Preparation of GaN by alkoxide process using Ga (i-OC3H7)3 as raw material

Preparation of GaN by alkoxide process using Ga (i-OC3H7)3 as raw material

The Group-III nitrides have attracted much attention for applications of blue light emitters and high temperature electronic devices. The synthesis of single-phase gallium nitride (GaN) powder has been achieved by reacting gallium oxide or gallium triisopropoxide with ammonia (NH3) flowing in a hot...

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Veröffentlicht in:Journal of Advanced Science 2000/08/31, Vol.12(1-2), pp.103-104
Hauptverfasser: NAGAO, Tomomi, ISHIMOTO, Yoichi, MATSUSHITA, Jun-ichi
Format: Artikel
Sprache:eng
Schlagworte:
Alkoxide
Gallium nitride
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Zusammenfassung:The Group-III nitrides have attracted much attention for applications of blue light emitters and high temperature electronic devices. The synthesis of single-phase gallium nitride (GaN) powder has been achieved by reacting gallium oxide or gallium triisopropoxide with ammonia (NH3) flowing in a hot wall tube furnace.
ISSN:0915-5651
1881-3917
DOI:10.2978/jsas.12.103