IBM 193nm Semiconductor Resist: Material Properties, Resist Characteristics and Lithographic Performance

IBM 193nm Semiconductor Resist: Material Properties, Resist Characteristics and Lithographic Performance

Using substituted poly(norbornenes), we have developed an etch-resistant, high resolution single layer 193nm positive resist. This paper describes the optical absorption properties, oxide-etch characteristics and resolution capabilities of such a first generation IBM resist.

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Bibliographische Detailangaben
Veröffentlicht in:Journal of Photopolymer Science and Technology 1999, Vol.12(3), pp.493-500
Hauptverfasser: Varanasi, P. Rao, Mewherter, A. M., Lawson, M. C., Jordhamo, G., Allen, R., Opitz, J., Ito, H., Wallow, T., Hofer, D.
Format: Artikel
Sprache:eng
Schlagworte:
193nm exposures
oxide-etch resistance
poly(norbornenes)
positive resist
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Beschreibung
Zusammenfassung:Using substituted poly(norbornenes), we have developed an etch-resistant, high resolution single layer 193nm positive resist. This paper describes the optical absorption properties, oxide-etch characteristics and resolution capabilities of such a first generation IBM resist.
ISSN:0914-9244
1349-6336
DOI:10.2494/photopolymer.12.493