Pressure dependence of the band gap energy for dilute nitride and antimony GaN x Sb y As 1−x−y
Dilute nitride and antimony GaNAsSb alloy can be considered as an alloy formed by adding N and Sb atoms into the host material GaAs. Under this condition, its band gap energy depending on pressure can be divided into two regions. In the low pressure range, the band gap energy is due to two factors....
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| Veröffentlicht in: | Materials science--Poland 2020-06, Vol.38 (2), p.248-252 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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