MINORITY CARRIERS MOBILITY DETERMINATION IN THE BASE REGION OF N+-P-P+ SILICON SOLAR CELL UNDER EFFECTS OF IRRADIATION FLUX, TEMPERATURE AND MAGNETIC FIELD

The aim of this study is to show the influence of temperature on the relative value of the short-circuit photocurrent density obtained from an n+-p-p+silicon solar cell front illuminated with modulated polychromatic light. The solar cell was already subjected to charged particules irradiation flux (Φp) and intensity (kl,) and remained under both magnetic field (B) and temperature (T). Thus, the graphical representation of the relative value of the short-circuit photocurrent density as a function of the square of the magnetic field (B) yields to determine the slope, which is related to the mobility of minority carriers in the base. It is obtained for a back surface field silicon solar cellunder both temperature and irradiation flux of charged particules.