RBS INVESTIGATION OF DEPTH PROFILE OF NITROGEN IMPLANTED INTO CHROMIUM SURFACE WITH ENERGIES OF 500 AND 1000keV

RBS INVESTIGATION OF DEPTH PROFILE OF NITROGEN IMPLANTED INTO CHROMIUM SURFACE WITH ENERGIES OF 500 AND 1000keV

With the aim of making thick nitride layer, Cr metal plates(>99.99%) were implanted with nitrogen ions(N2+) at energies of 500 and 1000keV to the dose from 3×1017 to 1018N atoms/cm2- The depth profile of nitrogens was investigated by means of Rutherford Backscattering Spectrometry (RBS). After an...

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Veröffentlicht in:Analytical Sciences 1991, Vol.7(Supple), pp.395-398
Hauptverfasser: Hirokawa, Takeshi, Nishiyama, Fumitaka, Sakamoto, Hiroki, Yoshida, Satoshi, Kiso, Yoshiyuki, Terashima, Keiichi, Matsusaka, Kikuo
Format: Artikel
Sprache:eng
Schlagworte:
Cr2N
Ion implantation
RBS
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Zusammenfassung:With the aim of making thick nitride layer, Cr metal plates(>99.99%) were implanted with nitrogen ions(N2+) at energies of 500 and 1000keV to the dose from 3×1017 to 1018N atoms/cm2- The depth profile of nitrogens was investigated by means of Rutherford Backscattering Spectrometry (RBS). After annealing at 800°C for one hour. the Cr2N layer with a trapezoidal profile was obtained. The maximum thickness obtained was ca. 3000A at the depth of 800A(500keV) and 2000A (1MeV) with the dose of 1018N atoms/cm2. The thickness was four times as large as that found in 90keV implantation.
ISSN:0910-6340
1348-2246
DOI:10.2116/analsci.7.Supple_395