Potentiodynamic Deposition of Cu Doped BixCuySb2-x-yTez Thin Film as Thermoelectric Materials

In this paper, the preparation of Cu-doped BixCuySb2-x-yTez thin film thermoelectric materials by electrodeposition in inorganic solution system was studied. The effects of Cu2+ concentration on the properties of BixCuySb2-x-yTez thin film thermoelectric materials were investigated. The composition, morphology and phase of the prepared BixCuySb2-x-yTez thin films were characterized by energy dispersive spectroscopy, environmental scanning electron microscope and X-ray diffraction. The conductivity and Seebeck coefficient of BixCuySb2-x-yTez thin film prepared under different conditions were also tested. The results show that doping of Cu element into BixSb2-xTez thermoelectric material can not only reduce the resistivity of the material, but also improve the morphology of the material, and the Seebeck coefficient of BixCuySb2-x-yTez thermoelectric material can reach up to 152 μV/K. When the Cu2+ concentration is 1.28 mmol L-1, the highest power factor of 577.6μW∙K-2∙m-1 can be obtained.