Switching of carbon-nanotube emitters by an integrated MOSFET

— The integration of carbon‐nanotube (CNT) emitters with a metal‐oxide‐semiconductor field‐effect transistor (MOSFET) can stabilize and control the emission current of CNTs. CNTs were grown by using the resist‐assisted patterning (RAP) process and plasma‐enhanced chemical vapor deposition (PECVD) and were connected to the drain part of an external MOSFET. The electron‐emission current of CNTs was switched by applying a low gate voltage to the MOSFET, and the switching current was very stable because the MOSFET was operated in the saturation region. Based on these results, the emission current of CNTs was stabilized and switched by using a low‐voltage‐driven MOSFET.