22.3: Flexible Top-gate Amorphous InGaZnO TFTs Array for AMOLED Applications

22.3: Flexible Top-gate Amorphous InGaZnO TFTs Array for AMOLED Applications

Flexible top‐gate amorphous InGaZnO TFTs array on a colorless polyimide substrate for AMOLED applications was successfully fabricated at 200 °C for the first time. The light transmittance of polyimide substrate is 90%. The maximum field‐effect mobility is 10.6 cm2/V‐s, subthreshold swing is 0.3 V/de...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2011-06, Vol.42 (1), p.284-287
Hauptverfasser: Yeh, Yung-Hui, Cheng, Chun-Cheng, Lin, Chang-Yu, Ho, Geng-Tai, Yu, Ming-Jiue, Lai, Benjamin Chih-Ming, Leu, Chyi-Ming
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Sprache:eng
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Zusammenfassung:Flexible top‐gate amorphous InGaZnO TFTs array on a colorless polyimide substrate for AMOLED applications was successfully fabricated at 200 °C for the first time. The light transmittance of polyimide substrate is 90%. The maximum field‐effect mobility is 10.6 cm2/V‐s, subthreshold swing is 0.3 V/decade, and the on/off current ratio is 108.
ISSN:0097-966X
2168-0159
DOI:10.1889/1.3621297