P‐35: The Effects of NiSi 2 Seed Control on SGS Crystallization and TFT Characteristics

To improve TFT characteristics and reduce leakage current, we have investigated the precise control of NiSi 2 seed shapes in a process called super grain silicon (SGS) crystallization. Excessive leakage current was reduced by the control of Ni in Si below ∼10 13 atoms/cm 2 . Relatively higher SGS crystallinity of about 94% was obtained by inducing (111) NiSi 2 seed to form a disc shape rather than that from a pyramid shaped seed with about 92%, resulting in more uniform TFT characteristics. Based on this seed control method, we fabricated a 14″ AMOLED TV having a pixel‐to‐pixel brightness uniformity of about 92%, which we believe is suitable for product acceptance.