P-12: Novel Positive-Intrinsic-Oxide Semiconductor (P-I-OS) Photo Sensor for Flat Panel Displays

For the first time, photo sensors employing p‐type Si and IGZO semiconductor (P‐I‐OS) have been fabricated with a sensor dimension of W/L = 1600/5. The IGZO layer was deposited using DC sputtering and replaces the conventional n+‐doped cathode electrode. The P‐I‐OS photo sensor is more sensitive to light with shorter wavelengths, and high to low photo‐current dynamic range is almost constant from −15V to −2.5V of anode bias. The P‐I‐OS photo sensor exhibits dynamic range of 53.3 dB under −5V of anode bias and 10,000 lx of illuminated light intensity