P-64: Using Electroless Plating Technology for Copper Metallization in AMLCD Application
The feasibility of using electro‐less plating (ELP) technology to manufacture copper (Cu) gate electrodes in TFTs is investigated. The poor adhesion between Cu and glass substrates is overcome by introducing ELP nickel‐phosphorus layers. Self‐aligning characteristics also omits the Cu‐etching proces...
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Veröffentlicht in: | SID International Symposium Digest of technical papers 2010-05, Vol.41 (1), p.1479-1481 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The feasibility of using electro‐less plating (ELP) technology to manufacture copper (Cu) gate electrodes in TFTs is investigated. The poor adhesion between Cu and glass substrates is overcome by introducing ELP nickel‐phosphorus layers. Self‐aligning characteristics also omits the Cu‐etching process. The similar electrical performance verifies the compatibility of this technology. |
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ISSN: | 0097-966X 2168-0159 |
DOI: | 10.1889/1.3499986 |