P-205L: Late-News Poster: Comparison between a-InGaZnO and a-InHfZnO TFTs in Perspective of Subgap Density of States (DOS) in Active Film

P-205L: Late-News Poster: Comparison between a-InGaZnO and a-InHfZnO TFTs in Perspective of Subgap Density of States (DOS) in Active Film

The extraction of acceptor‐like subgap DOS (gA(E)) in a‐InGaZnO and a‐InHfZnO TFTs is demonstrated by using multi‐frequency C‐ V technique. The DC performance and negative bias stress (NBS)‐ induced instability are compared in perspective of gA(E). The superior stability of a‐InHfZnO TFT is deduced...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2010-05, Vol.41 (1), p.1389-1392
Hauptverfasser: Lee, Sangwon, Kim, Sungchul, Jeon, Yong Woo, Kim, Dong Myong, Kima, Dae Hwan, Lee, Je-Hun, Du Ahn, Byung, Park, Sei Yong, Park, Jun-Hyun, Kim, Joo Han, Park, Jaewoo
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Sprache:eng
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Zusammenfassung:The extraction of acceptor‐like subgap DOS (gA(E)) in a‐InGaZnO and a‐InHfZnO TFTs is demonstrated by using multi‐frequency C‐ V technique. The DC performance and negative bias stress (NBS)‐ induced instability are compared in perspective of gA(E). The superior stability of a‐InHfZnO TFT is deduced to be originated from donor‐like DOS gD(E).
ISSN:0097-966X
2168-0159
DOI:10.1889/1.3499961