P-27: Novel AlNiLa Serves as Gate Electrodes of a-TFT for AMLCD

P-27: Novel AlNiLa Serves as Gate Electrodes of a-TFT for AMLCD

AlNiLa metallization technology is introduced for AMLCD as gate electrodes. Ni can effectively prevent Al diffusing into Si‐based layer while La can obviously increase uniformity during AlNiLa deposition than that of conventional Al‐Nd alloy. According to the electrical measurement results, the comp...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2010-05, Vol.41 (1), p.1322-1324
Hauptverfasser: Liu, Po-Tsun, Chou, Yi-Teh, Hsu, Ting-Hao, Huang, An-Di, Chen, Bing-Mau
Format: Artikel
Sprache:eng
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Zusammenfassung:AlNiLa metallization technology is introduced for AMLCD as gate electrodes. Ni can effectively prevent Al diffusing into Si‐based layer while La can obviously increase uniformity during AlNiLa deposition than that of conventional Al‐Nd alloy. According to the electrical measurement results, the compatibility of AlNiLa in TFT has been verified.
ISSN:0097-966X
2168-0159
DOI:10.1889/1.3499937