42.4: Characterization of Electrochemically-Active Defects in Si-Film Laser-Crystallized with Directional SLS by Measuring the Stress Release during Secco Etching

42.4: Characterization of Electrochemically-Active Defects in Si-Film Laser-Crystallized with Directional SLS by Measuring the Stress Release during Secco Etching

It has been verified that the crystal quality of directional SLS film achieves a position between those of ELC and CLC. The SLS film contains some electrochemically‐active in‐grain defects, which is hard to be passivated by hydrogen; this kind of defects are not observed in CLC nor ELC films.

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Veröffentlicht in:SID International Symposium Digest of technical papers 2009-06, Vol.40 (1), p.632-635
Hauptverfasser: Sasaki, Nobuo, Kitahara, Kuninori, Yamamoto, Kenichi
Format: Artikel
Sprache:eng
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Zusammenfassung:It has been verified that the crystal quality of directional SLS film achieves a position between those of ELC and CLC. The SLS film contains some electrochemically‐active in‐grain defects, which is hard to be passivated by hydrogen; this kind of defects are not observed in CLC nor ELC films.
ISSN:0097-966X
2168-0159
DOI:10.1889/1.3256860