26.2: Preferred Orientation Formation of MgO Layer during Ion Beam Assisted Deposition Process

26.2: Preferred Orientation Formation of MgO Layer during Ion Beam Assisted Deposition Process

MgO films deposited on Si (111) and Al2O3 (0006) substrate have only (111) diffraction independent of film thickness while those on Si (100) substrate have preferred orientation change from (200) to (111) as film thickened due to the highest adatom mobility of (200) plane. By using ion beam assisted...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2009-06, Vol.40 (1), p.356-358
Hauptverfasser: Yu, Hak Ki, Kim, Woong-Kwon, Lee, Jong-Lam, Park, Eung Chul, Kim, Jae Sung, Ryu, Jae Hwa
Format: Artikel
Sprache:eng
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Zusammenfassung:MgO films deposited on Si (111) and Al2O3 (0006) substrate have only (111) diffraction independent of film thickness while those on Si (100) substrate have preferred orientation change from (200) to (111) as film thickened due to the highest adatom mobility of (200) plane. By using ion beam assisted deposition, the crystal structure of MgO could be controlled via adjusting adatom mobility.
ISSN:0097-966X
2168-0159
DOI:10.1889/1.3256785