42.1: Invited Paper: Improved Amorphous In-Ga-Zn-O TFTs

42.1: Invited Paper: Improved Amorphous In-Ga-Zn-O TFTs

We review the features of amorphous In‐Ga‐Zn‐O (a‐IGZO) thin‐film transistors (TFTs), as well as circuit operation based on these TFTs. We also report a novel TFT structure which improves environmental stability of the TFT operation by taking full advantage of the a‐IGZO properties, where a conventi...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2008-05, Vol.39 (1), p.621-624
Hauptverfasser: Hayashi, Ryo, Sato, Ayumu, Ofuji, Masato, Abe, Katsumi, Yabuta, Hisato, Sano, Masafumi, Kumomi, Hideya, Nomura, Kenji, Kamiya, Toshio, Hirano, Masahiro, Hosono, Hideo
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Sprache:eng
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Zusammenfassung:We review the features of amorphous In‐Ga‐Zn‐O (a‐IGZO) thin‐film transistors (TFTs), as well as circuit operation based on these TFTs. We also report a novel TFT structure which improves environmental stability of the TFT operation by taking full advantage of the a‐IGZO properties, where a conventional PECVD a‐SiNX:H films serve not only as an effective barrier layer but also as a hydrogen source to form the coplanar source and drain.
ISSN:0097-966X
2168-0159
DOI:10.1889/1.3069739