12.2: Solution Processable Passivation Layer for Active Matrix Thin Film Transistors on Rigid and Flexible Substrates

12.2: Solution Processable Passivation Layer for Active Matrix Thin Film Transistors on Rigid and Flexible Substrates

Organosiloxane based spin on planarizing dielectrics (PTS‐E and PTS‐R) were developed for application in flat panel displays as a replacement to conformal chemical vapor deposited SiNx. Here we demonstrate the successful use of siloxane‐based material as a passivation layer for active matrix α‐Si th...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2008-05, Vol.39 (1), p.140-142
Hauptverfasser: Krishnamoorthy, Ahila, Spear, Richard, Gebrebrhan, Amanuel, Stifanos, Mehari, Bien, Hai, Lowe, Marie, Yellowaga, Deborah, Smith, Peter, O'Rourke, Shawn, Loy, Doug, Dailey, Jeff, Marrs, Michael, Ageno, Scott
Format: Artikel
Sprache:eng
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Zusammenfassung:Organosiloxane based spin on planarizing dielectrics (PTS‐E and PTS‐R) were developed for application in flat panel displays as a replacement to conformal chemical vapor deposited SiNx. Here we demonstrate the successful use of siloxane‐based material as a passivation layer for active matrix α‐Si thin film transistors (TFT) on both rigid and flexible substrates.
ISSN:0097-966X
2168-0159
DOI:10.1889/1.3069412