69.2: New R2PAT Printing Method for Fabricating TFT Electrodes

69.2: New R2PAT Printing Method for Fabricating TFT Electrodes

We have developed a low contact pressure Residual ink Removed Pattern Transfer (R2PAT) printing method which allows fully additive, vacuum‐free TFT electrode fabrication. A 900nm resolution and ±1um alignment accuracy has been achieved. A TFT fabricated using this method had demonstrated 33.9 cm2/Vs...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2008-05, Vol.39 (1), p.1058-1061
Hauptverfasser: Tanaka, Masanobu, Ishihara, Hirotsugu, Shimamura, Toshiki, Machida, Akio, Kamei, Takahiro, Ogawa, Masataka
Format: Artikel
Sprache:eng
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Zusammenfassung:We have developed a low contact pressure Residual ink Removed Pattern Transfer (R2PAT) printing method which allows fully additive, vacuum‐free TFT electrode fabrication. A 900nm resolution and ±1um alignment accuracy has been achieved. A TFT fabricated using this method had demonstrated 33.9 cm2/Vs mobility and a 108 Ion/Ioff ratio.
ISSN:0097-966X
2168-0159
DOI:10.1889/1.3069316