68.2: 3.5 Inch QCIF+ AM-OLED Panel Based on Oxide TFT Backplane

68.2: 3.5 Inch QCIF+ AM-OLED Panel Based on Oxide TFT Backplane

IGZO TFTs were fabricated on a glass substrate by conventional photo‐lithography and wet‐etching processes. The real mobility of our device was about 95 cm2/Vs and had very low dependence on the variation of W/L, channel length and channel width. An IGZO TFT array was also fabricated and a top emiss...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2007-05, Vol.38 (1), p.1826-1829
Hauptverfasser: Lee, Ho-Nyun, Kyung, Jaewoo, Kang, Sun Kil, Kim, Do Youl, Sung, Myeon-Chang, Kim, Seong-Joong, Kim, Chang Nam, Kim, Hong Gyu, Kim, Sung-tae
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Sprache:eng
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Zusammenfassung:IGZO TFTs were fabricated on a glass substrate by conventional photo‐lithography and wet‐etching processes. The real mobility of our device was about 95 cm2/Vs and had very low dependence on the variation of W/L, channel length and channel width. An IGZO TFT array was also fabricated and a top emission OLED device was successfully driven by it. Therefore, the oxide TFT could be one of the promising candidates as a backplane for the OLED device.
ISSN:0097-966X
2168-0159
DOI:10.1889/1.2785691