Low-temperature amorphous-silicon backplane technology development for flexible displays in a manufacturing pilot-line environment

— A low‐temperature amorphous‐silicon (a‐Si:H) thin‐film‐transistor (TFT) backplane technology for high‐information‐content flexible displays has been developed. Backplanes were integrated with frontplane technologies to produce high‐performance active‐matrix reflective electrophoretic ink, reflecti...

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Veröffentlicht in:Journal of the Society for Information Display 2007-07, Vol.15 (7), p.445-454
Hauptverfasser: Raupp, Gregory B., O'Rourke, Shawn M., Moyer, Curt, O'Brien, Barry P., Ageno, Scott K., Loy, Douglas E., Bawolek, Edward J., Allee, David R., Venugopal, Sameer M., Kaminski, Jann, Bottesch, Dirk, Dailey, Jeff, Long, Ke, Marrs, Michael, Munizza, Nick R., Haverinen, Hanna, Colaneri, Nicholas
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Sprache:eng
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Zusammenfassung:— A low‐temperature amorphous‐silicon (a‐Si:H) thin‐film‐transistor (TFT) backplane technology for high‐information‐content flexible displays has been developed. Backplanes were integrated with frontplane technologies to produce high‐performance active‐matrix reflective electrophoretic ink, reflective cholesteric liquid crystal and emissive OLED flexible‐display technology demonstrators (TDs). Backplanes up to 4 in. on the diagonal have been fabricated on a 6‐in. wafer‐scale pilot line. The critical steps in the evolution of backplane technology, from qualification of baseline low‐temperature (180°C) a‐Si:H process on the 6‐in. line with rigid substrates, to transferring the process to flexible plastic and flexible stainless‐steel substrates, to form factor scale‐up of the TFT arrays, and finally manufacturing scale‐up to a Gen 2 (370 × 470 mm) display‐scale pilot line, will be reviewed.
ISSN:1071-0922
1938-3657
DOI:10.1889/1.2759549