P-90: The Effect of Doping to MgO Protection Layer on Secondary Electron Emission Property

P-90: The Effect of Doping to MgO Protection Layer on Secondary Electron Emission Property

We investigated the effect of doping to MgO protection layer on secondary electron emission properties. The firing voltage of ZnO doped (1 at. %) MgO is lower by 40V than that of non‐doped MgO at 4.2 Torr cm. Li2O (1 at. %) and BaO (1 at. %) doped MgO also shows lower firing voltage than non‐doped M...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2006-06, Vol.37 (1), p.544-546
Hauptverfasser: Yu, Hak Ki, Kim, Woong-Kwon, Lee, Jong-Lam, Kim, Jae Sung, Ryu, Jae Hwa
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Sprache:eng
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Zusammenfassung:We investigated the effect of doping to MgO protection layer on secondary electron emission properties. The firing voltage of ZnO doped (1 at. %) MgO is lower by 40V than that of non‐doped MgO at 4.2 Torr cm. Li2O (1 at. %) and BaO (1 at. %) doped MgO also shows lower firing voltage than non‐doped MgO about 20V.
ISSN:0097-966X
2168-0159
DOI:10.1889/1.2433558