48.1: LTPS TFTs with Metal Electrodes Formed by Inkjet Printing Technology

Metal electrodes for low‐temperature polycrystalline‐silicon (LTPS) p‐channel thin‐film‐transistors (TFTs) have been fabricated employing an inkjet technique. This technique has the potential to reduce device fabrication costs and energy consumption during the device fabrication. We have developed a fine‐patterning technique employing the inkjet technique that is capable of producing metal lines with several μm widths by carefully controlling micro‐liquid behavior and surface wettability. TFTs employing the inkjet technique show good performance and reliability as same as conventional LTPS TFTs. These results show that the inkjet technique can be used to fabricate high‐performance LTPS TFTs at low cost.