33.2: Investigation of the Fin-Like TFT Structure in LTPS Devices

33.2: Investigation of the Fin-Like TFT Structure in LTPS Devices

LTPS TFTs realized with 3D Fin‐like multiple‐channels exhibit better electrical characteristics than those of conventional planar TFTs, due to their novel structure and the higher film quality in their device channels obtained through an ELC (Exicmer Laser Crystallization) process. The processes dev...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2005-05, Vol.36 (1), p.1258-1261
Hauptverfasser: Yin, Huaxiang, Xianyu, Wenxu, Jung, Jisim, Cho, Hans, Kim, Doyoung, Park, Kyungbae, Kwon, Jangyeon, Noguchi, T.
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Sprache:eng
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Zusammenfassung:LTPS TFTs realized with 3D Fin‐like multiple‐channels exhibit better electrical characteristics than those of conventional planar TFTs, due to their novel structure and the higher film quality in their device channels obtained through an ELC (Exicmer Laser Crystallization) process. The processes developed to form high TSi/WSi ratio Si fins serve to provide a larger ELC process window without involving additional patterning steps.
ISSN:0097-966X
2168-0159
DOI:10.1889/1.2036232