P-2: A Novel Self-Aligned SiGe Elevated S/D polycrystalline-Silicon Thin-Film Transistor

A novel self‐aligned SiGe elevated source and drain (S/D) poly‐Si thin film transistor (poly‐Si TFT) was fabricated. The elevated source and drain regions were selectively grown by ultra‐high vacuum chemical vapor deposition (UHVCVD) at 550°C. The resultant transistor has a thin channel region and a...

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Veröffentlicht in:	SID International Symposium Digest of technical papers 2002-05, Vol.33 (1), p.204-207
Hauptverfasser:	Peng, Du-Zen, Shih, Po-Sheng, Zan, Hsiao-Wen, Chang, Chun-Yen, Chang, Ting-Chang, Lin, Chiung-Wei
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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