Highly Sensitive Gate/Body-Tied Metal-Oxide-Semiconductor Field-Effect Transistor-Type Photodetector with Wavelength-Selective Metal Grid Structure Using Standard Complementary Metal-Oxide-Semiconductor Technology

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Veröffentlicht in:	Sensors and materials 2015
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doi_str_mv	10.18494/SAM.2015.1054
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source	DOAJ Directory of Open Access Journals; EZB-FREE-00999 freely available EZB journals; Alma/SFX Local Collection
title	Highly Sensitive Gate/Body-Tied Metal-Oxide-Semiconductor Field-Effect Transistor-Type Photodetector with Wavelength-Selective Metal Grid Structure Using Standard Complementary Metal-Oxide-Semiconductor Technology
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