K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10W

High output power AlGaN/GaN metal-insulator-semicon-ductor (MIS) hetero-junction field effect transistor (HFET) on Si substrate for millimeter-wave application has developed. High temperature chemical vapor deposition (HT-CVD) grown SiN as a gate insulator improves the breakdown characteristics which enables the operation at high drain voltage of 55V. The device exhibits high drain current of 1.1A/mm free from the current collapse and high RF gain of 10.4dB. The amplifier module developed AlGaN/GaN MIS-HFET with the gate width of 5.4mm exhibits an output power of 10.7W and a linear gain of 4dB at 26.5GHz. The resultant high output power is very promising for long-distance communication at millimeter-wave in the future which would enable high speed and high density data transmission.