Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al2O3 and SiO2 Stacked Tunneling Layers

Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al2O3 and SiO2 Stacked Tunneling Layers

The programming characteristics of polysilicon-aluminum oxide-nitride-oxide-silicon (SANOS) nonvolatile memory devices with Al2O3 and SiO2 stacked tunneling layers were investigated. The electron and hole drifts in the Si3N4 layer were calculated to determine the program speed of the proposed SANOS...

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Veröffentlicht in:IEICE Transactions on Electronics 2010/05/01, Vol.E93.C(5), pp.651-653
Hauptverfasser: KIM, Hyun Woo, KIM, Dong Hun, YOU, Joo Hyung, KIM, Tae Whan
Format: Artikel
Sprache:eng
Schlagworte:
charge transport
SANOS
silicon nitride
SONOS
stacked tunneling layer
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Zusammenfassung:The programming characteristics of polysilicon-aluminum oxide-nitride-oxide-silicon (SANOS) nonvolatile memory devices with Al2O3 and SiO2 stacked tunneling layers were investigated. The electron and hole drifts in the Si3N4 layer were calculated to determine the program speed of the proposed SANOS devices. Simulation results showed that enhancement of the programming speed in SANOS was achieved by utilizing SiO2 and Al2O3 stacked tunneling layers.
ISSN:0916-8524
1745-1353
DOI:10.1587/transele.E93.C.651