A 500 MHz-BW -52.5 dB-THD Voltage-to-Time Converter Utilizing Two-Step Transition Inverter Delay Lines in 28 nm CMOS

In this paper, a 500 MHz-BW -52.5 dB-THD Voltage-to-Time Converter (VTC) in 28 nm CMOS is presented. A two-step transition inverter raises the Voltage-to-Time (VT) conversion gain to 100 ps/V which is >10x higher than a conventional current-starved inverter. The number of required inverter stages...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEICE Transactions on Electronics 2017/06/01, Vol.E100.C(6), pp.560-567
Hauptverfasser: MIKI, Takuji, MIURA, Noriyuki, MIZUTA, Kento, DOSHO, Shiro, NAGATA, Makoto
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this paper, a 500 MHz-BW -52.5 dB-THD Voltage-to-Time Converter (VTC) in 28 nm CMOS is presented. A two-step transition inverter raises the Voltage-to-Time (VT) conversion gain to 100 ps/V which is >10x higher than a conventional current-starved inverter. The number of required inverter stages is reduced to 4 from 64, resulting in 1/8 conversion latency and thus 13.2 dB THD suppression at a 500 MHz full Nyquist frequency. A feedback control of the bias voltage in the two-step transition inverter suppresses PVT variations in the VT conversion gain. A test-chip measurement successfully demonstrates -52.5 dB THD at 500 MHz input frequency without sampling-and-hold circuits. Effective VT conversion range over +/-64 ps time difference is measured with 1.2 Vpp differential input while keeping high linearity of less than +/-0.53 LSB INL/DNL, which results in 1 ps/LSB conversion linearity. The proposed VTC occupies 84 um2 silicon area and consumes 0.18 mW at 1 GS/s.
ISSN:0916-8524
1745-1353
DOI:10.1587/transele.E100.C.560