An Enhanced Well-Changed GGNMOS for 3.3-V ESD Protection in 0.13-µm SOI Process

An Enhanced Well-Changed GGNMOS for 3.3-V ESD Protection in 0.13-µm SOI Process

In this paper, an enhanced well-changed GGNMOS (EW-GGNMOS) is proposed and demonstrated. The new device has the same topology as the conventional 3.3V GGNMOS, except that its well has been changed to the 1.2V p-well. Attributed to higher doping concentration, resulting in a much lower trigger voltag...

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Veröffentlicht in:IEICE Transactions on Electronics 2020/06/01, Vol.E103.C(6), pp.332-334
Hauptverfasser: ZHOU, Mo, SHAN, Yi, DONG, Yemin
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enhanced
trigger voltage
uniformity
well-changed
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creator ZHOU, Mo
SHAN, Yi
DONG, Yemin
description In this paper, an enhanced well-changed GGNMOS (EW-GGNMOS) is proposed and demonstrated. The new device has the same topology as the conventional 3.3V GGNMOS, except that its well has been changed to the 1.2V p-well. Attributed to higher doping concentration, resulting in a much lower trigger voltage and desirable turn-on uniformity compared to conventional 3.3V GGNMOS. Therefore, we can use EW-GGNMOS as a 3.3V ESD protection device without any additional process.
doi_str_mv 10.1587/transele.2019ECS6017
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subjects enhanced
trigger voltage
uniformity
well-changed
title An Enhanced Well-Changed GGNMOS for 3.3-V ESD Protection in 0.13-µm SOI Process
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