An Enhanced Well-Changed GGNMOS for 3.3-V ESD Protection in 0.13-µm SOI Process

In this paper, an enhanced well-changed GGNMOS (EW-GGNMOS) is proposed and demonstrated. The new device has the same topology as the conventional 3.3V GGNMOS, except that its well has been changed to the 1.2V p-well. Attributed to higher doping concentration, resulting in a much lower trigger voltage and desirable turn-on uniformity compared to conventional 3.3V GGNMOS. Therefore, we can use EW-GGNMOS as a 3.3V ESD protection device without any additional process.