GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique
In this paper, we describe the seeded growth of ∼20 mm diameter 15 mm long GaN ingots from the melt-solution. This is the first successful attempt to conduct growth of GaN boule-crystals. GaN ingots were grown from Ga-based melt in the temperature range of 800-1000°C at less than 2 atm ambient press...
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Veröffentlicht in: | MRS Internet journal of nitride semiconductor research 2000, Vol.5 (S1), p.438-444 |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this paper, we describe the seeded growth of ∼20 mm diameter 15 mm long GaN ingots from the melt-solution. This is the first successful attempt to conduct growth of GaN boule-crystals. GaN ingots were grown from Ga-based melt in the temperature range of 800-1000°C at less than 2 atm ambient pressure. Growth was performed at ∼2 mm/hr growth rate. X-ray diffraction revealed polycrystalline structure of the ingots. Homoepitaxial GaN layers were deposited by HVPE technique on the substrates, which were fabricated from the grown GaN ingots. |
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ISSN: | 1092-5783 1092-5783 |
DOI: | 10.1557/S1092578300004610 |