GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique

In this paper, we describe the seeded growth of ∼20 mm diameter 15 mm long GaN ingots from the melt-solution. This is the first successful attempt to conduct growth of GaN boule-crystals. GaN ingots were grown from Ga-based melt in the temperature range of 800-1000°C at less than 2 atm ambient press...

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Veröffentlicht in:MRS Internet journal of nitride semiconductor research 2000, Vol.5 (S1), p.438-444
Hauptverfasser: Sukhoveyev, V.A., Ivantsov, V.A., Nikitina, I.P., Babanin, A.I., Polyakov, A.Y., Govorkov, A.V., Smirnov, N.B., Mil’vidskii, M.G., Dmitriev, V.A.
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Sprache:eng
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Zusammenfassung:In this paper, we describe the seeded growth of ∼20 mm diameter 15 mm long GaN ingots from the melt-solution. This is the first successful attempt to conduct growth of GaN boule-crystals. GaN ingots were grown from Ga-based melt in the temperature range of 800-1000°C at less than 2 atm ambient pressure. Growth was performed at ∼2 mm/hr growth rate. X-ray diffraction revealed polycrystalline structure of the ingots. Homoepitaxial GaN layers were deposited by HVPE technique on the substrates, which were fabricated from the grown GaN ingots.
ISSN:1092-5783
1092-5783
DOI:10.1557/S1092578300004610