SrTiO 3 films on platinized (0001) Al 2 O 3 : Characterization of texture and nonstoichiometry accommodation

Transmission electron microscopy and x-ray diffraction were used to study SrTiO 3 films grown on platinized (0001) Al 2 O 3 substrates. The Pt films were epitaxial with an orientation relationship described by (111) Pt ‖(0001) Al 2 O 3 and [110] Pt ‖[10 ¯ 1 0] Al 2 O 3 . SrTiO 3 films with two diffe...

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Veröffentlicht in:Journal of materials research 2004-05, Vol.19 (5), p.1477-1486
Hauptverfasser: Klenov, Dmitri O., Taylor, Troy R., Stemmer, Susanne
Format: Artikel
Sprache:eng
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Zusammenfassung:Transmission electron microscopy and x-ray diffraction were used to study SrTiO 3 films grown on platinized (0001) Al 2 O 3 substrates. The Pt films were epitaxial with an orientation relationship described by (111) Pt ‖(0001) Al 2 O 3 and [110] Pt ‖[10 ¯ 1 0] Al 2 O 3 . SrTiO 3 films with two different Sr to Ti ratios, 1.02 and 1.4, were deposited by radio-frequency magnetron sputtering. In the film with a large amount of Sr excess, the grain sizes were smaller and a high density of planar defects was observed. The films were predominantly (111) textured, but a weaker (110) texture component was also found, independent of stoichiometry. While the (111) texture could be explained with the excellent lattice match with (111) Pt, the (110) textured grains had a large mismatch with the Pt electrode. We propose that the presence of the (110) oriented grains is due to nucleation at Pt surface defects. Planar defects in the films with a large amount of Sr excess served to accommodate the nonstoichiometry. Comparison with homoepitaxial SrTiO 3 films showed that the density of planar defects in the SrTiO 3 films on (111)Pt/Al 2 O 3 is insufficient to accommodate all the excess Sr. The influence of the film microstructure on the dielectric properties is also discussed.
ISSN:0884-2914
2044-5326
DOI:10.1557/JMR.2004.0197